Key Research Areas

Nanoelectronics, Semiconductor Materials and Devices, Non-Volatile Memories


About

Dr. Robin Khosla received Ph.D. degree from the School of Computing and Electrical Engineering, Indian Institute of Technology (IIT), Mandi, Himachal Pradesh, India in 2017. He was awarded Alexander von Humboldt (AvH) Research Fellowship for Postdoctoral Researchers, Germany in 2018 and worked as AvH Postdoc Fellow at the Institute of Semiconductor Engineering, University of Stuttgart, Germany, from Aug 2019 to Sept 2021. He served as an Assistant Professor at the Department of Electronics and Communication Engineering, National Institute of Technology (NIT), Silchar, Assam, 788010, India from June 2018 to Jul 2019 and Oct 2021 to May 2023. Robin Khosla currently works as Assistant Professor, in the School of Computing and Electrical Engineering, Indian Institute of Technology (IIT) Mandi from Jun 2023 onwards.


Recent Publications

1. A. K. Yadav, C. V. Kumar, G . S. Baghel, and R. Khosla, "Performance and Reliability Assessment of Source Work Function Engineered Charge Plasma based Al/HfO2/Al2O3/Ge, Double Gate TFET," Engineering Research Express., vol. , pp. , 2024 (coming soon).
2. A. K. Yadav, S. P. Malik, G . S. Baghel, and R. Khosla, "Influence of Charge Traps on Charge Plasma-Germanium Double-Gate TFET for RF/Analog & low-power switching applications," Microelectronic Reliability, vol. 153, pp. 115312, 2024.
3. C. V. Kumar, A. K. Yadav, A. Deka, and R. Khosla, "Investigating the Effects of Doping Gradient, Trap Charges, and Temperature on Ge Vertical TFET for Low Power Switching and Analog Applications," Material Science and Engineering B, vol.299, pp.116996, 2024.
4. S. Mattaparthi, D. K. Sinha, A. Bhura, and R. Khosla, "Design of an eco-friendly perovskite Au/NiO/FASnI3/ZnO0.25S0.75/FTO, device structure for solar cell applications using SCAPS-1D," Results in Optics, vol. 12, pp. 100444, 2023.
5. S. Sharma, S. Das, R. Khosla, H. Shrimali and S. K. Sharma, "Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors," IEEE Transactions on Electron Devices, vol. 70, no. 4, pp. 1520-1526, 2023.


Course Taught

1. EE211: Analog Circuit Design